ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220

RS noliktavas nr.: 864-8950PRažotājs: ON SemiconductorRažotāja kods: FJP2160DTU
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Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

2 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

100 W

Minimum DC Current Gain

20

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Dimensions

9.9 x 4.5 x 15.95mm

Produkta apraksts

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,70

Katrs (tiek piegadats Tubina) (bez PVN)

€ 2,057

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Izvēlēties iepakojuma veidu

€ 1,70

Katrs (tiek piegadats Tubina) (bez PVN)

€ 2,057

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
5 - 45€ 1,70€ 8,50
50 - 95€ 1,40€ 7,00
100 - 245€ 1,25€ 6,25
250 - 495€ 1,20€ 6,00
500+€ 1,10€ 5,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

2 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

100 W

Minimum DC Current Gain

20

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Dimensions

9.9 x 4.5 x 15.95mm

Produkta apraksts

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more