onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

RS noliktavas nr.: 178-4627PRažotājs: onsemiRažotāja kods: FGH60T65SQD-F155
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

333 W

Package Type

TO-247 G03

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+175 °C

Energy Rating

50mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

3813pF

Izcelsmes valsts

China

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,35

Katrs (tiek piegadats Tubina) (bez PVN)

€ 4,054

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
Izvēlēties iepakojuma veidu

€ 3,35

Katrs (tiek piegadats Tubina) (bez PVN)

€ 4,054

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

333 W

Package Type

TO-247 G03

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+175 °C

Energy Rating

50mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

3813pF

Izcelsmes valsts

China