onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole

RS noliktavas nr.: 772-9231Ražotājs: ON SemiconductorRažotāja kods: FGH40T100SMD
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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1000 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

333 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Produkta apraksts

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 5,10

Katrs (Paka ir 2) (bez PVN)

€ 6,171

Katrs (Paka ir 2) (Ieskaitot PVN)

onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole
Izvēlēties iepakojuma veidu

€ 5,10

Katrs (Paka ir 2) (bez PVN)

€ 6,171

Katrs (Paka ir 2) (Ieskaitot PVN)

onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
2 - 8€ 5,10€ 10,20
10 - 98€ 4,35€ 8,70
100 - 248€ 3,45€ 6,90
250 - 498€ 3,30€ 6,60
500+€ 3,10€ 6,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1000 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

333 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Produkta apraksts

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more