Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1000 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
333 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,10
Katrs (Paka ir 2) (bez PVN)
€ 6,171
Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 5,10
Katrs (Paka ir 2) (bez PVN)
€ 6,171
Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 5,10 | € 10,20 |
10 - 98 | € 4,35 | € 8,70 |
100 - 248 | € 3,45 | € 6,90 |
250 - 498 | € 3,30 | € 6,60 |
500+ | € 3,10 | € 6,20 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1000 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
333 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.