Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
300 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.2 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,10
Katrs (Tubina ir 30) (bez PVN)
€ 3,751
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 3,10
Katrs (Tubina ir 30) (bez PVN)
€ 3,751
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
300 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.2 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.