P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085

RS noliktavas nr.: 178-4235Ražotājs: onsemiRažotāja kods: FDWS9509L-F085
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

40 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

5.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5.1mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.25V

Izcelsmes valsts

Philippines

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,847

Katrs (Rulli ir 3000) (bez PVN)

€ 1,025

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085

€ 0,847

Katrs (Rulli ir 3000) (bez PVN)

€ 1,025

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

40 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

5.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5.1mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.25V

Izcelsmes valsts

Philippines