N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 onsemi FDMS4D0N12C

RS noliktavas nr.: 178-4251Ražotājs: onsemiRažotāja kods: FDMS4D0N12C
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

120 V

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

106 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

36 nC @ 6 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

Philippines

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,45

Katrs (Rulli ir 3000) (bez PVN)

€ 2,964

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 onsemi FDMS4D0N12C

€ 2,45

Katrs (Rulli ir 3000) (bez PVN)

€ 2,964

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 onsemi FDMS4D0N12C
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

120 V

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

106 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

36 nC @ 6 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more