Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03

RS noliktavas nr.: 146-4094Ražotājs: ON SemiconductorRažotāja kods: FDMS1D4N03S
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.09 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

5.85mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,366

Katrs (Paka ir 10) (bez PVN)

€ 0,443

Katrs (Paka ir 10) (Ieskaitot PVN)

Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03
Izvēlēties iepakojuma veidu

€ 0,366

Katrs (Paka ir 10) (bez PVN)

€ 0,443

Katrs (Paka ir 10) (Ieskaitot PVN)

Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.09 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

5.85mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more