Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
80 V
Package Type
Power33
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
3.4mm
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Izcelsmes valsts
Philippines
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,20
Katrs (Rulli ir 3000) (bez PVN)
€ 1,452
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 1,20
Katrs (Rulli ir 3000) (bez PVN)
€ 1,452
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 1,20 | € 3 600,00 |
6000+ | € 1,15 | € 3 450,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
80 V
Package Type
Power33
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
3.4mm
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Izcelsmes valsts
Philippines