P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK onsemi FDD9507L-F085

RS noliktavas nr.: 178-4233Ražotājs: onsemiRažotāja kods: FDD9507L-F085
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

100 nC @ 10 V

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

Philippines

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,25

Katrs (Rulli ir 2500) (bez PVN)

€ 1,512

Katrs (Rulli ir 2500) (Ieskaitot PVN)

P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK onsemi FDD9507L-F085

€ 1,25

Katrs (Rulli ir 2500) (bez PVN)

€ 1,512

Katrs (Rulli ir 2500) (Ieskaitot PVN)

P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK onsemi FDD9507L-F085
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

100 nC @ 10 V

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Izcelsmes valsts

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more