N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F onsemi FCPF165N65S3R0L

RS noliktavas nr.: 178-4244Ražotājs: ON SemiconductorRažotāja kods: FCPF165N65S3R0L
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.3mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

15.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,35

Katrs (Tubina ir 50) (bez PVN)

€ 2,844

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F onsemi FCPF165N65S3R0L

€ 2,35

Katrs (Tubina ir 50) (bez PVN)

€ 2,844

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F onsemi FCPF165N65S3R0L
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 2,35€ 117,50
100 - 200€ 1,85€ 92,50
250 - 450€ 1,80€ 90,00
500 - 950€ 1,55€ 77,50
1000+€ 1,30€ 65,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.3mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

15.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more