Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Series
SuperFET III
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
5.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Height
21.08mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 10,20
Katrs (bez PVN)
€ 12,34
Katrs (Ieskaitot PVN)
1
€ 10,20
Katrs (bez PVN)
€ 12,34
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 24 | € 10,20 |
25 - 49 | € 9,40 |
50 - 224 | € 8,60 |
225+ | € 8,00 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Series
SuperFET III
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
5.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Height
21.08mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts