Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin ECH onsemi ECH8656-TL-H

RS noliktavas nr.: 802-0844Ražotājs: ON SemiconductorRažotāja kods: ECH8656-TL-H
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

20 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

48 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Width

2.3mm

Transistor Material

Si

Height

0.9mm

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,363

Katrs (Paka ir 15) (bez PVN)

€ 0,439

Katrs (Paka ir 15) (Ieskaitot PVN)

Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin ECH onsemi ECH8656-TL-H

€ 0,363

Katrs (Paka ir 15) (bez PVN)

€ 0,439

Katrs (Paka ir 15) (Ieskaitot PVN)

Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin ECH onsemi ECH8656-TL-H
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
15 - 15€ 0,363€ 5,44
30 - 135€ 0,359€ 5,38
150 - 435€ 0,352€ 5,28
450 - 885€ 0,35€ 5,25
900+€ 0,345€ 5,18

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

20 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

48 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Width

2.3mm

Transistor Material

Si

Height

0.9mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more