Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
CPH
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Width
1.6mm
Number of Elements per Chip
1
Height
0.9mm
Izcelsmes valsts
Japan
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,234
Katrs (Rulli ir 3000) (bez PVN)
€ 0,283
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,234
Katrs (Rulli ir 3000) (bez PVN)
€ 0,283
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 12000 | € 0,234 | € 702,00 |
15000+ | € 0,229 | € 687,00 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
CPH
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Width
1.6mm
Number of Elements per Chip
1
Height
0.9mm
Izcelsmes valsts
Japan
Produkta apraksts