onsemi CPH5905G-TL-E N-Channel JFET, 15 V, Idss 10 → 20mA, 5-Pin CPH

RS noliktavas nr.: 792-5278Ražotājs: ON SemiconductorRažotāja kods: CPH5905G-TL-E
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Idss Drain-Source Cut-off Current

10 → 20mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CPH

Pin Count

5

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.6 x 0.9mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.9mm

Width

1.6mm

Produkta apraksts

Bipolar NPN & JFET Transistor, ON Semiconductor

Compact space-saving composite SMT package incoporating both an NPN Bipolar Transistor and N-channel JFET. In some devices the NPN emitter and JFET drain share a common connection.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,05

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,06

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

onsemi CPH5905G-TL-E N-Channel JFET, 15 V, Idss 10 → 20mA, 5-Pin CPH
Izvēlēties iepakojuma veidu

€ 0,05

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,06

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

onsemi CPH5905G-TL-E N-Channel JFET, 15 V, Idss 10 → 20mA, 5-Pin CPH
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Idss Drain-Source Cut-off Current

10 → 20mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CPH

Pin Count

5

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.6 x 0.9mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.9mm

Width

1.6mm

Produkta apraksts

Bipolar NPN & JFET Transistor, ON Semiconductor

Compact space-saving composite SMT package incoporating both an NPN Bipolar Transistor and N-channel JFET. In some devices the NPN emitter and JFET drain share a common connection.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more