onsemi BD680AS PNP Darlington Pair, -4 A 80 V HFE:750, 3-Pin TO-126

RS noliktavas nr.: 806-7111Ražotājs: ON SemiconductorRažotāja kods: BD680ASTU
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Tehniskie dokumenti

Specifikācija

Transistor Type

PNP

Maximum Continuous Collector Current

-4 A

Maximum Collector Emitter Voltage

80 V

Maximum Emitter Base Voltage

-5 V

Package Type

TO-126

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

750

Maximum Collector Base Voltage

-80 V

Maximum Collector Emitter Saturation Voltage

-2.8 V

Maximum Collector Cut-off Current

-500µA

Maximum Power Dissipation

14 W

Maximum Operating Temperature

+150 °C

Length

8mm

Height

11mm

Width

3.25mm

Dimensions

8 x 3.25 x 11mm

Produkta apraksts

Darlington PNP Transistors, Fairchild Semiconductor

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,523

Katrs (Tubina ir 60) (bez PVN)

€ 0,633

Katrs (Tubina ir 60) (Ieskaitot PVN)

onsemi BD680AS PNP Darlington Pair, -4 A 80 V HFE:750, 3-Pin TO-126

€ 0,523

Katrs (Tubina ir 60) (bez PVN)

€ 0,633

Katrs (Tubina ir 60) (Ieskaitot PVN)

onsemi BD680AS PNP Darlington Pair, -4 A 80 V HFE:750, 3-Pin TO-126
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

PNP

Maximum Continuous Collector Current

-4 A

Maximum Collector Emitter Voltage

80 V

Maximum Emitter Base Voltage

-5 V

Package Type

TO-126

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

750

Maximum Collector Base Voltage

-80 V

Maximum Collector Emitter Saturation Voltage

-2.8 V

Maximum Collector Cut-off Current

-500µA

Maximum Power Dissipation

14 W

Maximum Operating Temperature

+150 °C

Length

8mm

Height

11mm

Width

3.25mm

Dimensions

8 x 3.25 x 11mm

Produkta apraksts

Darlington PNP Transistors, Fairchild Semiconductor

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more