Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-225
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.8 V dc
Height
11.1mm
Width
3mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-55 °C
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Length
7.8mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,516
Katrs (Kaste ir 500) (bez PVN)
€ 0,624
Katrs (Kaste ir 500) (Ieskaitot PVN)
500
€ 0,516
Katrs (Kaste ir 500) (bez PVN)
€ 0,624
Katrs (Kaste ir 500) (Ieskaitot PVN)
500
Pirkt iepakojumos
Daudzums | Vienības cena | Per Kaste |
---|---|---|
500 - 500 | € 0,516 | € 258,00 |
1000+ | € 0,418 | € 209,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-225
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.8 V dc
Height
11.1mm
Width
3mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-55 °C
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Length
7.8mm
Izcelsmes valsts
China