Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN/PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
420
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.2 x 1.35 x 1mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,034
Katrs (Rulli ir 3000) (bez PVN)
€ 0,041
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,034
Katrs (Rulli ir 3000) (bez PVN)
€ 0,041
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 6000 | € 0,034 | € 102,00 |
9000 - 12000 | € 0,03 | € 90,00 |
15000+ | € 0,027 | € 81,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN/PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
420
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.2 x 1.35 x 1mm
Izcelsmes valsts
China