Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,054
Katrs (Rulli ir 2000) (bez PVN)
€ 0,065
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 0,054
Katrs (Rulli ir 2000) (bez PVN)
€ 0,065
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
2000 - 8000 | € 0,054 | € 108,00 |
10000 - 22000 | € 0,053 | € 106,00 |
24000 - 48000 | € 0,046 | € 92,00 |
50000+ | € 0,043 | € 86,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China