Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
P.O.A.
Industriālais iepakojums (Lente)
100
P.O.A.
Industriālais iepakojums (Lente)
100
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C