N-Channel MOSFET, 150 mA, 30 V, 3-Pin SOT-23 onsemi 3LN01C-TB-H

RS noliktavas nr.: 145-5193Ražotājs: ON SemiconductorRažotāja kods: 3LN01C-TB-H
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

1.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

1.58 nC @ 10 V

Height

1.1mm

PRICED TO CLEAR

Yes

Izcelsmes valsts

China

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,023

Katrs (Rulli ir 3000) (bez PVN)

€ 0,028

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 150 mA, 30 V, 3-Pin SOT-23 onsemi 3LN01C-TB-H

€ 0,023

Katrs (Rulli ir 3000) (bez PVN)

€ 0,028

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 150 mA, 30 V, 3-Pin SOT-23 onsemi 3LN01C-TB-H
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

1.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

1.58 nC @ 10 V

Height

1.1mm

PRICED TO CLEAR

Yes

Izcelsmes valsts

China

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more