Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,387
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,468
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
20
€ 0,387
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,468
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
20 - 20 | € 0,387 | € 7,74 |
40 - 80 | € 0,303 | € 6,06 |
100 - 180 | € 0,22 | € 4,40 |
200 - 380 | € 0,202 | € 4,04 |
400+ | € 0,187 | € 3,74 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.