Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V dc
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,646
Katrs (Paka ir 20) (bez PVN)
€ 0,782
Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 0,646
Katrs (Paka ir 20) (bez PVN)
€ 0,782
Katrs (Paka ir 20) (Ieskaitot PVN)
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 80 | € 0,646 | € 12,92 |
100 - 480 | € 0,469 | € 9,38 |
500 - 980 | € 0,391 | € 7,82 |
1000 - 2480 | € 0,333 | € 6,66 |
2500+ | € 0,328 | € 6,56 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V dc
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China