NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23

RS noliktavas nr.: 112-5510Ražotājs: NXPRažotāja kods: PMBFJ177,215
brand-logo
View all in JFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

NXP

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Izcelsmes valsts

China

Produkta apraksts

P-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,605

Katrs (Paka ir 5) (bez PVN)

€ 0,732

Katrs (Paka ir 5) (Ieskaitot PVN)

NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23

€ 0,605

Katrs (Paka ir 5) (bez PVN)

€ 0,732

Katrs (Paka ir 5) (Ieskaitot PVN)

NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 0,605€ 3,02
50 - 95€ 0,574€ 2,87
100 - 245€ 0,544€ 2,72
250 - 495€ 0,513€ 2,56
500+€ 0,498€ 2,49

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

NXP

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Izcelsmes valsts

China

Produkta apraksts

P-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more