Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
3mm
Height
1mm
Width
1.4mm
Izcelsmes valsts
China
Produkta apraksts
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,182
Katrs (Rulli ir 3000) (bez PVN)
€ 0,22
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,182
Katrs (Rulli ir 3000) (bez PVN)
€ 0,22
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
3mm
Height
1mm
Width
1.4mm
Izcelsmes valsts
China
Produkta apraksts
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.