Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,388
Katrs (Paka ir 5) (bez PVN)
€ 0,469
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,388
Katrs (Paka ir 5) (bez PVN)
€ 0,469
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 0,388 | € 1,94 |
25 - 45 | € 0,323 | € 1,62 |
50 - 245 | € 0,315 | € 1,58 |
250 - 495 | € 0,312 | € 1,56 |
500+ | € 0,297 | € 1,48 |
Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.