NXP PMBFJ109,215 N-Channel JFET, 25 V, Idss min. 40mA, 3-Pin SOT-23

RS noliktavas nr.: 626-3235Ražotājs: NXPRažotāja kods: PMBFJ109,215
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Tehniskie dokumenti

Specifikācija

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

min. 40mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

12 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Izcelsmes valsts

China

Produkta apraksts

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,388

Katrs (Paka ir 5) (bez PVN)

€ 0,469

Katrs (Paka ir 5) (Ieskaitot PVN)

NXP PMBFJ109,215 N-Channel JFET, 25 V, Idss min. 40mA, 3-Pin SOT-23

€ 0,388

Katrs (Paka ir 5) (bez PVN)

€ 0,469

Katrs (Paka ir 5) (Ieskaitot PVN)

NXP PMBFJ109,215 N-Channel JFET, 25 V, Idss min. 40mA, 3-Pin SOT-23
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 0,388€ 1,94
25 - 45€ 0,323€ 1,62
50 - 245€ 0,315€ 1,58
250 - 495€ 0,312€ 1,56
500+€ 0,297€ 1,48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

min. 40mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

12 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Izcelsmes valsts

China

Produkta apraksts

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more