NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23

RS noliktavas nr.: 124-2284Ražotājs: NXPRažotāja kods: BF861C,215
brand-logo
View all in JFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

+150 °C

Length

3mm

Izcelsmes valsts

China

Produkta apraksts

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,304

Katrs (Rulli ir 3000) (bez PVN)

€ 0,368

Katrs (Rulli ir 3000) (Ieskaitot PVN)

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23

€ 0,304

Katrs (Rulli ir 3000) (bez PVN)

€ 0,368

Katrs (Rulli ir 3000) (Ieskaitot PVN)

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

+150 °C

Length

3mm

Izcelsmes valsts

China

Produkta apraksts

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more