Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
10 to 18mA
Maximum Drain Source Voltage
20 V
Maximum Drain Gate Voltage
20V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Width
1.4mm
Maximum Operating Temperature
+150 °C
Length
3mm
Height
1mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,634
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,767
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
€ 0,634
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,767
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
10 - 40 | € 0,634 | € 6,34 |
50 - 90 | € 0,582 | € 5,82 |
100 - 240 | € 0,548 | € 5,48 |
250 - 490 | € 0,502 | € 5,02 |
500+ | € 0,463 | € 4,63 |
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Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
10 to 18mA
Maximum Drain Source Voltage
20 V
Maximum Drain Gate Voltage
20V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Width
1.4mm
Maximum Operating Temperature
+150 °C
Length
3mm
Height
1mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.