Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
148 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.3mm
Typical Gate Charge @ Vgs
42.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
€ 46,00
€ 1,15 Katrs (tiek piegadats Tubina) (bez PVN)
€ 55,66
€ 1,392 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
40
€ 46,00
€ 1,15 Katrs (tiek piegadats Tubina) (bez PVN)
€ 55,66
€ 1,392 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
40
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
40 - 96 | € 1,15 | € 4,60 |
100 - 196 | € 1,10 | € 4,40 |
200 - 396 | € 1,00 | € 4,00 |
400+ | € 0,931 | € 3,72 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
148 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.3mm
Typical Gate Charge @ Vgs
42.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts