Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220AB PSMN3R0-60PS,127

RS noliktavas nr.: 798-2946PRažotājs: NexperiaRažotāja kods: PSMN3R0-60PS,127
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

306 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.3mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+175 °C

Height

16mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Philippines

Produkta apraksts

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

€ 22,50

€ 2,25 Katrs (tiek piegadats Tubina) (bez PVN)

€ 27,22

€ 2,722 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220AB PSMN3R0-60PS,127
Izvēlēties iepakojuma veidu

€ 22,50

€ 2,25 Katrs (tiek piegadats Tubina) (bez PVN)

€ 27,22

€ 2,722 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220AB PSMN3R0-60PS,127
Noliktavas stāvoklis patreiz nav pieejams
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Noliktavas stāvoklis patreiz nav pieejams

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Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

306 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.3mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+175 °C

Height

16mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Philippines

Produkta apraksts

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more