Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 15,70
€ 0,314 Katrs (Paka ir 50) (bez PVN)
€ 19,00
€ 0,38 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
€ 15,70
€ 0,314 Katrs (Paka ir 50) (bez PVN)
€ 19,00
€ 0,38 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 550 | € 0,314 | € 15,70 |
600 - 1450 | € 0,169 | € 8,45 |
1500+ | € 0,143 | € 7,15 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts