Nexperia PBSS5350T,215 PNP Transistor, -2 A, -50 V, 3-Pin SOT-23

RS noliktavas nr.: 166-0519Ražotājs: NexperiaRažotāja kods: PBSS5350T,215
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Specifikācija

Transistor Type

PNP

Maximum DC Collector Current

-2 A

Maximum Collector Emitter Voltage

-50 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

1.2 W

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

50 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

100 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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Noliktavas stāvoklis patreiz nav pieejams

€ 231,00

€ 0,077 Katrs (Rulli ir 3000) (bez PVN)

€ 279,51

€ 0,093 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Nexperia PBSS5350T,215 PNP Transistor, -2 A, -50 V, 3-Pin SOT-23

€ 231,00

€ 0,077 Katrs (Rulli ir 3000) (bez PVN)

€ 279,51

€ 0,093 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Nexperia PBSS5350T,215 PNP Transistor, -2 A, -50 V, 3-Pin SOT-23
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

PNP

Maximum DC Collector Current

-2 A

Maximum Collector Emitter Voltage

-50 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

1.2 W

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

50 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

100 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more