N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002AK,215

RS noliktavas nr.: 136-2122Ražotājs: NexperiaRažotāja kods: NX7002AK,215
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1.33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

0.33 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,026

Katrs (Rulli ir 3000) (bez PVN)

€ 0,031

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002AK,215

€ 0,026

Katrs (Rulli ir 3000) (bez PVN)

€ 0,031

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002AK,215
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 3000€ 0,026€ 78,00
6000 - 6000€ 0,025€ 75,00
9000+€ 0,023€ 69,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1.33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

0.33 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more