Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115

RS noliktavas nr.: 136-2144Ražotājs: NexperiaRažotāja kods: NX3008CBKS,115
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Tehniskie dokumenti

Specifikācija

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.35mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

Malaysia

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,077

Katrs (Rulli ir 3000) (bez PVN)

€ 0,093

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115

€ 0,077

Katrs (Rulli ir 3000) (bez PVN)

€ 0,093

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 3000€ 0,077€ 231,00
6000 - 6000€ 0,073€ 219,00
9000+€ 0,071€ 213,00

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.35mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more