Nexperia N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BST82,215

RS noliktavas nr.: 112-5548Ražotājs: NexperiaRažotāja kods: BST82,215
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 0,84

€ 0,169 Katrs (Paka ir 5) (bez PVN)

€ 1,02

€ 0,204 Katrs (Paka ir 5) (Ieskaitot PVN)

Nexperia N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BST82,215
Izvēlēties iepakojuma veidu

€ 0,84

€ 0,169 Katrs (Paka ir 5) (bez PVN)

€ 1,02

€ 0,204 Katrs (Paka ir 5) (Ieskaitot PVN)

Nexperia N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BST82,215

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more