Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89

RS noliktavas nr.: 816-7811Ražotājs: NexperiaRažotāja kods: BST60
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Specifikācija

Transistor Type

PNP

Maximum Continuous Collector Current

-1 A

Maximum Collector Emitter Voltage

45 V

Maximum Emitter Base Voltage

-5 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

-1.9 V

Maximum Collector Base Voltage

-60 V

Maximum Collector Emitter Saturation Voltage

-1.3 V

Maximum Collector Cut-off Current

-50nA

Height

1.6mm

Width

2.6mm

Dimensions

4.6 x 2.6 x 1.6mm

Maximum Operating Temperature

+150 °C

Length

4.6mm

Maximum Power Dissipation

1.3 W

Minimum Operating Temperature

-65 °C

Produkta apraksts

Darlington Transistors, Nexperia

Bipolar Transistors, Nexperia

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,206

Katrs (Paka ir 10) (bez PVN)

€ 0,249

Katrs (Paka ir 10) (Ieskaitot PVN)

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89
Izvēlēties iepakojuma veidu

€ 0,206

Katrs (Paka ir 10) (bez PVN)

€ 0,249

Katrs (Paka ir 10) (Ieskaitot PVN)

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

PNP

Maximum Continuous Collector Current

-1 A

Maximum Collector Emitter Voltage

45 V

Maximum Emitter Base Voltage

-5 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

-1.9 V

Maximum Collector Base Voltage

-60 V

Maximum Collector Emitter Saturation Voltage

-1.3 V

Maximum Collector Cut-off Current

-50nA

Height

1.6mm

Width

2.6mm

Dimensions

4.6 x 2.6 x 1.6mm

Maximum Operating Temperature

+150 °C

Length

4.6mm

Maximum Power Dissipation

1.3 W

Minimum Operating Temperature

-65 °C

Produkta apraksts

Darlington Transistors, Nexperia

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more