Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,111
Katrs (Rulli ir 100) (bez PVN)
€ 0,134
Katrs (Rulli ir 100) (Ieskaitot PVN)
100
€ 0,111
Katrs (Rulli ir 100) (bez PVN)
€ 0,134
Katrs (Rulli ir 100) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 100 | € 0,111 | € 11,10 |
200 - 400 | € 0,088 | € 8,80 |
500 - 900 | € 0,072 | € 7,20 |
1000 - 1900 | € 0,049 | € 4,90 |
2000+ | € 0,046 | € 4,60 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts