P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215

RS noliktavas nr.: 436-8091Ražotājs: NexperiaRažotāja kods: BSS84,215
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,388

Katrs (Paka ir 10) (bez PVN)

€ 0,469

Katrs (Paka ir 10) (Ieskaitot PVN)

P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215
Izvēlēties iepakojuma veidu

€ 0,388

Katrs (Paka ir 10) (bez PVN)

€ 0,469

Katrs (Paka ir 10) (Ieskaitot PVN)

P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 0,388€ 3,88
50 - 90€ 0,371€ 3,71
100 - 240€ 0,31€ 3,10
250 - 490€ 0,29€ 2,90
500+€ 0,271€ 2,71

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more