Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,243
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,294
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
40
€ 0,243
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,294
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
40
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
40 - 360 | € 0,243 | € 9,72 |
400 - 760 | € 0,097 | € 3,88 |
800+ | € 0,094 | € 3,76 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts