N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Nexperia BSH108,215

RS noliktavas nr.: 124-2287Ražotājs: NexperiaRažotāja kods: BSH108,215
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-65 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,13

Katrs (Rulli ir 3000) (bez PVN)

€ 0,157

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Nexperia BSH108,215

€ 0,13

Katrs (Rulli ir 3000) (bez PVN)

€ 0,157

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Nexperia BSH108,215
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-65 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more