N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-323 Nexperia 2N7002BKW,115

RS noliktavas nr.: 781-6704PRažotājs: NexperiaRažotāja kods: 2N7002BKW,115
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 0,178

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,215

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-323 Nexperia 2N7002BKW,115
Izvēlēties iepakojuma veidu

€ 0,178

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,215

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-323 Nexperia 2N7002BKW,115
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more