N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G

RS noliktavas nr.: 829-3360PRažotājs: MicrochipRažotāja kods: DN3765K4-G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.2mm

Transistor Material

Si

Width

6.73mm

Minimum Operating Temperature

-55 °C

Height

2.39mm

Produkta apraksts

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

MOSFET Transistors, Microchip

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€ 1,60

Katrs (tiek piegadats Rulli) (bez PVN)

€ 1,936

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G
Izvēlēties iepakojuma veidu

€ 1,60

Katrs (tiek piegadats Rulli) (bez PVN)

€ 1,936

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.2mm

Transistor Material

Si

Width

6.73mm

Minimum Operating Temperature

-55 °C

Height

2.39mm

Produkta apraksts

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

MOSFET Transistors, Microchip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more