Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.2mm
Width
6.73mm
Number of Elements per Chip
1
Height
2.39mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,55
Katrs (Rulli ir 2000) (bez PVN)
€ 1,876
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 1,55
Katrs (Rulli ir 2000) (bez PVN)
€ 1,876
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.2mm
Width
6.73mm
Number of Elements per Chip
1
Height
2.39mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.