Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
350 V
Package Type
TO-243AA
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
10 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Transistor Material
Si
Height
1.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,771
Katrs (Rulli ir 2000) (bez PVN)
€ 0,933
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 0,771
Katrs (Rulli ir 2000) (bez PVN)
€ 0,933
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
350 V
Package Type
TO-243AA
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
10 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Transistor Material
Si
Height
1.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.