Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.7mm
Width
4.826mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,80
Katrs (tiek piegadats Tubina) (bez PVN)
€ 2,178
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
5
€ 1,80
Katrs (tiek piegadats Tubina) (bez PVN)
€ 2,178
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
5 - 20 | € 1,80 | € 9,00 |
25 - 95 | € 1,75 | € 8,75 |
100+ | € 1,70 | € 8,50 |
Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.7mm
Width
4.826mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.