Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.826mm
Length
10.7mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.51mm
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 85,00
€ 1,70 Katrs (Tubina ir 50) (bez PVN)
€ 102,85
€ 2,057 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 85,00
€ 1,70 Katrs (Tubina ir 50) (bez PVN)
€ 102,85
€ 2,057 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
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Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.826mm
Length
10.7mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.51mm
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.