N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip 2N7000-G

RS noliktavas nr.: 177-9588Ražotājs: MicrochipRažotāja kods: 2N7000-G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Width

4.06mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.08mm

Height

5.33mm

Series

2N7000

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Izcelsmes valsts

Taiwan, Province Of China

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,375

Katrs (Iepakojuma ir 1000) (bez PVN)

€ 0,454

Katrs (Iepakojuma ir 1000) (Ieskaitot PVN)

N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip 2N7000-G

€ 0,375

Katrs (Iepakojuma ir 1000) (bez PVN)

€ 0,454

Katrs (Iepakojuma ir 1000) (Ieskaitot PVN)

N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip 2N7000-G
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Width

4.06mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.08mm

Height

5.33mm

Series

2N7000

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Izcelsmes valsts

Taiwan, Province Of China