N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R580PTH

RS noliktavas nr.: 871-5047Ražotājs: MagnaChipRažotāja kods: MMF60R580PTH
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

580 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

26 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

16.13mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,25

Katrs (Tubina ir 10) (bez PVN)

€ 1,512

Katrs (Tubina ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R580PTH

€ 1,25

Katrs (Tubina ir 10) (bez PVN)

€ 1,512

Katrs (Tubina ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R580PTH
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
10 - 40€ 1,25€ 12,50
50 - 90€ 1,05€ 10,50
100 - 290€ 0,921€ 9,21
300 - 490€ 0,798€ 7,98
500+€ 0,781€ 7,81

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

580 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

26 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

16.13mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more