P-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC MagnaChip MDS3603URH

RS noliktavas nr.: 871-4993Ražotājs: MagnaChipRažotāja kods: MDS3603URH
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

38.4 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.5mm

Izcelsmes valsts

China

Produkta apraksts

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,217

Katrs (Rulli ir 25) (bez PVN)

€ 0,263

Katrs (Rulli ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC MagnaChip MDS3603URH
Izvēlēties iepakojuma veidu

€ 0,217

Katrs (Rulli ir 25) (bez PVN)

€ 0,263

Katrs (Rulli ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC MagnaChip MDS3603URH
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

38.4 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.5mm

Izcelsmes valsts

China

Produkta apraksts

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more