N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip MDS1528URH

RS noliktavas nr.: 871-4984Ražotājs: MagnaChipRažotāja kods: MDS1528URH
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

27.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

4.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.9mm

Typical Gate Charge @ Vgs

7.3 nC @ 10 V

Width

3.9mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.5mm

Izcelsmes valsts

China

Produkta apraksts

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,077

Katrs (Rulli ir 25) (bez PVN)

€ 0,093

Katrs (Rulli ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip MDS1528URH
Izvēlēties iepakojuma veidu

€ 0,077

Katrs (Rulli ir 25) (bez PVN)

€ 0,093

Katrs (Rulli ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip MDS1528URH
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

27.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

4.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.9mm

Typical Gate Charge @ Vgs

7.3 nC @ 10 V

Width

3.9mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.5mm

Izcelsmes valsts

China

Produkta apraksts

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more