Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
13.1 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
23.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
4.9mm
Typical Gate Charge @ Vgs
7.8 nC @ 10 V
Width
3.9mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.5mm
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,177
Katrs (Rulli ir 25) (bez PVN)
€ 0,214
Katrs (Rulli ir 25) (Ieskaitot PVN)
25
€ 0,177
Katrs (Rulli ir 25) (bez PVN)
€ 0,214
Katrs (Rulli ir 25) (Ieskaitot PVN)
25
Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
13.1 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
23.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
4.9mm
Typical Gate Charge @ Vgs
7.8 nC @ 10 V
Width
3.9mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.5mm
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.